• 比特28

    DIP(SOP)23 Description

    DIP (SOP) 23 IPM is targeted at applications below 400W, especially for markets that are demanding, cost sensitive, and require a compact, energy efficient market.

    The core can be packaged in a complete range of products. In addition to the 500V/2A and 500V/5A specifications of the imported brand, the core can also innovatively build high-power density IGBTs based on the package, and the thickness and thermal conductivity of the insulation layer. Optimized, the XNS50660 is introduced, which achieves high power density and good heat dissipation performance, and can extend the application power to the range of 100W-300W. With superior cost performance, XNS50660A* (A*S) has been widely used in air conditioner outdoor fans, range hoods, hot water circulation pumps, washing and other small power fans and pumps.


    DIP(SOP)23 IPM Features and Benefits:

    One, high power density:

    • Equipped with a core energy FST (Field stop + Trench) IGBT, which has a lower saturation voltage drop and faster switching speed;
    • The power density is 40% larger than the domestic mainstream planar process, and it can be built into the DIP23 package with up to 6A IGBTs;
    • 12*29mm ultra-small package, can be installed with a heat sink to support 300W applications;

    Core Energy DIP (SOP) 23 IPM Size

    Second, high integration:
    • Integrated 18 chips, 3 bootstrap diodes, 6 IGBTs, 6 FRDs, 3 driver ICs;
    • 1 IPM can replace more than 30 separate devices;    

    Three, high design freedom:

    • Two temperature output solutions (thermistor NTC and temperature voltage VTS) are available. The DIP23 package and product features are compatible with imported brands and can be directly replaced.
    • The same package also has 2A and 5A MOS products, which can cover more power ranges with one board.
    • Provide evaluation boards for test evaluation and provide overall application solutions

    Evaluation board

    Parameters

    Package
    from

    Product
    number

    Voltage
    (V)
    Current
    (A)

    Insulation
    withstand
    voltage
    (KV)

    Optimization
    Switch
    (KHz)

    Device

    Recommend
    power
    (W)

    Thermal
    interface

    Bootstrap
    diode

    Undervoltage
    protection

    Overcurrent
    protection

    Temperature
    Output

    Interlock RDS(on)(Typ)
    (Ω)
    VF
    (Typ)
    (V)
    Rth
    (j-c)(Max)
    (℃/W)
    VCE
    (SAT)(Typ)
    (V)
    DIP23(SOP)23 XNM02S23H6 600 2 1.5 20 MOSFET 120 塑料 Yes Yes No NTC Yes 4.5 1.5 9.3
    XNM03S23D5 500 3 1.5 20 MOSFET 150 塑料 Yes Yes No No Yes 2.6 1.5 9.1
    XNM05S23H5 500 5 1.5 20 MOSFET 170 塑料 Yes Yes No NTC Yes 1.6 1.5 6.13
    XNS03S23H6 600 3 1.5 20 IGBT 150 塑料 Yes Yes No NTC Yes 2.4 1.25 6.5
    XNS06S23H6 600 6 1.5 20 IGBT 200 塑料 Yes Yes No NTC Yes 2.1 1.4 5.5